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SSM3J16FV
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16FV
High Speed Switching Applications Analog Switch Applications
* * Small package Low on-resistance
0.220.05
Unit: mm : Ron = 8 (max) (@VGS = -4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V)
1.20.05 0.80.05 0.320.05 3 0.130.05 1. Gate 2. Source 3. Drain
Absolute Maximum Ratings (Ta = 25C)
1.20.05 0.80.05
Gate-Source voltage Drain current DC Pulse
VGSS ID IDP PD (Note 1) Tch Tstg
10 -100 -200 150 150 -55~150
V mA mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
VESM
JEDEC JEITA TOSHIBA Weight :1.5mg
0.50.05
0.4
Drain-Source voltage
VDS
-20
V
0.4
Characteristics
Symbol
Rating
Unit
1 2
2-1L1B
Note 1: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6 mm x 3)
0.5mm 0.45mm 0.45mm 0.4mm
Marking
3
Equivalent Circuit (top view)
3
DT
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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SSM3J16FV
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 10 V, VDS = 0 ID = -0.1 mA, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -10 mA ID = -10 mA, VGS = -4 V Drain-Source on-resistance RDS (ON) ID = -10 mA, VGS = -2.5 V ID = -1 mA, VGS = -1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDD = -3 V, ID = - 10 mA, VGS = 0 ~ -2.5 V VDS = -3 V, VGS = 0, f = 1 MHz MIN. -20 -0.6 25 TYP. 6 8 18 11 3.7 10 130 190 MAX. 1 -1 -1.1 8 12 45 pF pF pF ns UNIT A V A V mS

Switching Time Test Circuit
(a) Test circuit
0 IN 50 RL VDD -2.5 V 90% OUT
(b) VIN
0V
10%
-2.5V
10 s
(c) VOUT
VDS (ON)
90% 10% tr ton toff tf
VDD = -3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C
VDD
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device.
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SSM3J16FV
ID - VDS
-250 Common Source -200 -10 -4 Ta = 25C -3 -150 -100 Ta = 100C -10 25C -1 -1000 Common Source VDS = -3 V -2.7 -2.5 -2.3 -100 -2.1 -1.9 -50 -1.7 VGS = -1.5 V 0 0 -0.5 -1 -1.5 -2 -0.01 0 -1
ID - VGS
(mA)
ID
Drain current
Drain current
ID
(mA)
-25C
-0.1
-2
-3
-4
Drain - Source voltage VDS (V)
Gate - Source voltage VGS (V)
RDS (ON) - ID
RDS (ON) - VGS
20 1.8 Common Source ID = -1 mA
Drain - Source on-resistance RDS (ON) ()
25
Drain - Source on-resistance RDS (ON) ()
VGS = -1.5 V
1.6 1.4 1.2 10 8 6 .4 2 -25 0 -2 -4 -6 -10 Ta=100
20
15 -2.5 V
10
25
5
-4 V
0 -1
-10
-100
-1000
0
-8
Drain current
ID
(mA)
Gate - Source voltage VGS (V)
RDS (ON) - Ta
40 35 30 25 20 15 10 5 0 -25 -2.5 V, -10mA VGS =-1.5 V, ID=-1mA Common Source -2 -1.8 Common Source ID = -0.1 mA VDS = -3 V
Vth - Ta
Gate threshold voltage Vth (V)
125 150
Drain - Source on-resistance RDS (ON) ()
-1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25
-4V, -10mA 0 25 50 75 100
0
25
50
75
100
125
150
Ambient temperature Ta (C)
Ambient temperature Ta (C)
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SSM3J16FV
Yfs - ID
1000 -250 500 300 Common Source VDS =-3 V Ta = 25C Common Source VGS = 0 V Ta = 25C D
IDR - VDS
Yfs
Drain reverse current IDR (mA)
-200
Forward transfer admittance ( S)
100 50 30
-150
G S
IDR
-100
10 5 3
-50
1 -1
-10
-100
-1000
0 0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain current ID (mA)
Drain - Source VDS (V)
c - VDS
200 Common Source VGS = 0 V f = 1 MHz Ta = 25C 10000 5000 3000 toff 1000 500 300 ton tr tf
t - ID
Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25C
Capacitance C (pF)
100
10
Switching time t (ns)
-100
Ciss Coss
100 50 30
1 -0.1
Crss -1 -10 10 -0.1 -1 -10 -100
Drain - Source voltage VDS
(V)
Drain current ID (mA)
PD - Ta
250 Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3
Power dissipation PD (mW)
200
150
100
50
0 0
20
40
60
80
100
120
140
160
Ta
(C)
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SSM3J16FV
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01

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